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This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.
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NGTD28T65F2SWK
Obsolete
Pb
A
H
P
-
-
NA
0
PLRNG
1
N
-
650
-
1.75
-
-
-
-
-
-
5
-
-
-
Price N/A
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NGTD28T65F2WP
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Pb
A
H
P
-
-
NA
0
PLRNG
1
N
-
650
-
1.75
-
-
-
-
-
-
5
-
-
-
Price N/A
More Details
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