Protected MOSFETs | NID5001N

自保护 MOSFET，42 V 箝位，温度和电流限值，ESD

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NID5001N 属于先进的功率 MOSFET 系列，采用安森美半导体的最新 MOSFET 技术工艺，可实现每单位硅面积最低的导通电阻，同时集成了很多智能特性。集成的温度和电流限值一起提供短路保护。 该器件具有集成的漏极-门极箝位，使其能够耐受雪崩模式下的高能量。 该箝位还可针对非预期的瞬变电压提供附加安全裕度。 静电 (ESD) 保护通过集成的门极-源极箝位提供。

  • Low RDSon
  • Current Limitation
  • Thermal Shutdown with Automatic Restart
  • Short Circuit Protection
  • IDSS Specified at Elevated Temperature
  • Avalanche Energy Specified
  • Slew Rate Control for Low Noise Switching
  • Overvoltage Clamped Protection
  • Pb-Free Package is Available

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NID5001NT4

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

235

REEL

2500

N

N-Channel

42

33

29

64

Price N/A

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NID5001NT4G

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CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

N-Channel

42

33

29

64

Price N/A

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