具有用于汽车高速数据线的电池短路阻断功能的低电容 ESD 保护

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概览

NIS/NIV1161 用于保护高速数据线路免受 ESD 以及汽车电池短路等情况危害。超低电容和低 ESD 箝位电压,使得此器件成为保护电压敏感性高速数据线路的理想方案,同时低 RDS(on) FET 限制了信号线路上的失真。 通流式封装可实现简单的 PCB 布局和必要的匹配跟踪长度,可保持 USB 和 HDMI 等协议高速差分线之间的一致阻抗。

  • Automotive High Speed Signal Pairs
  • USB 2.0
  • LVDS
  • Automotive Infotainment
  • Automotive Clusters
  • Low Capacitance (0.65 pF Typical, I/O to GND)
  • Diode Capacitance Matching Between I/O’s: 1% Typical
  • Optimized Layout
  • Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4)
  • Low ESD Clamping Voltage
  • Short-to-Battery Blocking
  • NIV1161MTWTAG Wettable Flank Package
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant
  • NIV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

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NIS1161MTTAG

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

USB 2.0

2

Unidirectional

0.65

16.5

16

1

-

$0.51

More Details

NIV1161MTTAG

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

USB 2.0

2

Unidirectional

0.65

16.5

16

1

-

$0.3993

More Details

NIV1161MTWTAG

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Active

CAD Model

Pb

A

H

P

WDFNW6 2.0x2.2, 0.65P

1

260

REEL

3000

Y

USB 2.0

2

Unidirectional

0.65

16.5

16

1

-

$0.3572

More Details

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