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NSBC114EF3: NPN Bipolar Digital Transistor (BRT)

Overview
Specifications
Datasheet: Digital Transistors
Rev. 6 (143kB)
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Product Overview
产品说明
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
特性
 
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
技术文档及设计资源
应用注释 (1) 数据表 (1)
仿真模型 (1) 封装图纸 (1)
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NSBC114EF3T5G Active
AEC Qualified
Pb-free
Halide free
NPN Bipolar Digital Transistor (BRT) SOT-1123-3 524AA 1 Tape and Reel 8000 $0.08
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : 8 to 12
Datasheet: Digital Transistors
Rev. 6 (143kB)
»查看材料成分
»产品更改通知 (1)
Product Overview

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) hFE Min R1 (kΩ) R2 (kΩ) R1/R2 Typ Vi(off) Max (V) Vi(on) Min (V) Package Type
 AEC Qualified 
 Pb-free 
 Halide free 
 Active     NPN Bipolar Digital Transistor (BRT)   NPN   0.1   50   35   10   10   1   0.8   2.5   SOT-1123-3 
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