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NSR01L30NXT5G: Schottky Barrier Diode, 100 mA, 30 V

Overview
Specifications
Datasheet: 30 V, 100 mA, Low IR Schottky Diode, DSN2 (0201)
Rev. 2 (88.0kB)
»查看材料成分
»产品更改通知 (3)
Product Overview
产品说明
The Schottky diode is optimized for low forward voltage drop and low leakage current. The DSN-2 (Dual Silicon No-lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100 percent utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages.
特性   优势
     
  • Low Forward Voltage Drop
 
  • Reduces Power Dissipation
  • Low Reverse Current
   
  • Very High Switching Speed
   
  • Reverse Voltage and Current Protection
   
应用   终端产品
  • LCD and Keypad Backlighting
  • Camera Photo Flash
 
  • Mobile Handsets
  • Notebooks, PCs & PDAs
技术文档及设计资源
应用注释 (3) 数据表 (1)
仿真模型 (4) 封装图纸 (1)
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NSR01L30NXT5G Active
Pb-free
Halide free
Schottky Barrier Diode, 100 mA, 30 V, DSN2 (0201) Schottky Barrier Diode DSN-2 152AA 1 Die Surf Tape and Reel 5000 $0.05
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : 2 to 4
Digikey   (2015-07-09) : >10K
Mouser   (2015-07-09) : >10K
PandS   (2015-07-09) : >1K
Datasheet: 30 V, 100 mA, Low IR Schottky Diode, DSN2 (0201)
Rev. 2 (88.0kB)
»查看材料成分
»产品更改通知 (3)
Product Overview

Product Compliance Status Description Configuration VRRM Min (V) VF Max (V) IRM Max (uA) IO(rec) Max (A) IFSM Max (A) trr Max (ns) Cj Max (pF) Package Type
 Pb-free 
 Halide free 
 Active     Schottky Barrier Diode, 100 mA, 30 V, DSN2 (0201) Schottky Barrier Diode   Single   30   0.4   0.2   0.1   4   -   7   DSN-2 
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NSR02F30MX  200 mA, 30 V, x3DFN 0201 Schottky Barrier Diode

  • Low Forward Voltage Drop
  • High Switching Speed
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