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General Purpose and Low VCE(sat) Transistors | NSS1C200
概览
低饱和压双极结晶体管 (BJT) 是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。
应用
- Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
终端产品
- Mobile Phones, PDAs, MP3 players, Computers, Power Supplies, Automotive Body Electronics, Toys.
特性
- High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
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可订购器件:
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产品
NSS1C200MZ4T1G
Active
Pb
A
H
P
SOT-223-4 / TO-261-4D
1
260
REEL
1000
Y
PNP
Low VCE(sat)
0.125
2
100
140
7
0.95
0.85
120
360
100
2
$0.1985
More Details
NSS1C200MZ4T3G
Active
Pb
A
H
P
SOT-223-4 / TO-261-4D
1
260
REEL
4000
Y
PNP
Low VCE(sat)
0.125
2
100
140
7
0.95
0.85
120
360
100
2
$0.188
More Details
NSV1C200MZ4T1G
Active
Pb
A
H
P
SOT-223-4 / TO-261-4D
1
260
REEL
1000
Y
PNP
Low VCE(sat)
0.125
2
100
140
7
0.95
0.85
120
360
100
2
$0.1869
More Details
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