General Purpose and Low VCE(sat) Transistors | NSS1C200

低饱和压晶体管，PNP，100 V，2.0 A

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低饱和压双极结晶体管 (BJT) 是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。

  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
  • Mobile Phones, PDAs, MP3 players, Computers, Power Supplies, Automotive Body Electronics, Toys.
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
    Qualified and PPAP Capable

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

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Reference Price

NSS1C200MZ4T1G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

0.0318

1

260

REEL

1000

Y

PNP

Low VCE(sat)

0.125

2

100

140

7

0.95

0.85

120

360

100

2

$0.1985

More Details

NSS1C200MZ4T3G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

0.0318

1

260

REEL

4000

Y

PNP

Low VCE(sat)

0.125

2

100

140

7

0.95

0.85

120

360

100

2

$0.188

More Details

NSV1C200MZ4T1G

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

0.0318

1

260

REEL

1000

Y

PNP

Low VCE(sat)

0.125

2

100

140

7

0.95

0.85

120

360

100

2

$0.1869

More Details

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