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NSS1C200: Low VCE(sat) Transistor, PNP, 100 V, 2.0 A

Overview
Specifications
Datasheet: Low VCE(sat) Transistor, NPN, 100 V, 2.0 A
Rev. 5 (104.0kB)
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»产品更改通知 (2)
Product Overview
产品说明
Low VCE(sat) Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
特性   优势
     
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
 
  • Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
    Qualified and PPAP Capable
   
应用   终端产品
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
 
  • Mobile Phones, PDAs, MP3 players, Computers, Power Supplies, Automotive Body Electronics, Toys.
技术文档及设计资源
培训教材 (1) 仿真模型 (4)
应用注释 (1) 数据表 (1)
白皮书 (2) 封装图纸 (1)
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NSS1C200MZ4T1G Active
AEC Qualified
Pb-free
Halide free
Low VCE(sat) Transistor, PNP, 100 V, 2.0 A SOT-223-4 / TO-261-4 318E-04 1 Tape and Reel 1000 $0.176
NSS1C200MZ4T3G Active
AEC Qualified
Pb-free
Halide free
Low VCE(sat) Transistor, PNP, 100 V, 2.0 A SOT-223-4 / TO-261-4 318E-04 1 Tape and Reel 4000 $0.176
NSV1C200MZ4T1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Low VCE(sat) Transistor, PNP, 100 V, 2.0 A SOT-223-4 / TO-261-4 318E-04 1 Tape and Reel 1000 $0.1936
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : 13 to 16
Mouser   (2015-07-09) : >1K
PandS   (2015-07-09) : <1K
市场订货至交货的时间(周) : 13 to 16
市场订货至交货的时间(周) : 13 to 16
Datasheet: Low VCE(sat) Transistor, NPN, 100 V, 2.0 A
Rev. 5 (104.0kB)
»查看材料成分
»产品更改通知 (2)
Product Overview

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type
 AEC Qualified 
 Pb-free 
 Halide free 
 Active     Low VCE(sat) Transistor, PNP, 100 V, 2.0 A   PNP   2   100   0.125   120   360   100   2   SOT-223-4 / TO-261-4 
 AEC Qualified 
 Pb-free 
 Halide free 
 Active     Low VCE(sat) Transistor, PNP, 100 V, 2.0 A   PNP   2   100   0.125   120   360   100   2   SOT-223-4 / TO-261-4 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Low VCE(sat) Transistor, PNP, 100 V, 2.0 A   PNP   2   100   0.125   120   360   100   2   SOT-223-4 / TO-261-4 
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