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NSS40301MD: Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A

Overview
Specifications
Datasheet: Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A
Rev. 1 (106.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
产品说明
ON Semiconductor e2 PowerEdge family of Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
特性
 
  • Current Gain Matching to 10%
  • Base Emitter Voltage Matched to 2 mV
  • This is a Pb-Free Device
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
    Qualified and PPAP Capable
应用   终端产品
  • Current Mirrors
  • Differential Amplifiers
  • DC-DC Converters
  • Power management in portable and battery powered products
 
  • Cellular and cordless phones
  • PDAs
技术文档及设计资源
培训教材 (1) 数据表 (1)
白皮书 (2) 封装图纸 (1)
仿真模型 (4)  
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NSS40301MDR2G Active
AEC Qualified
Pb-free
Halide free
Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A SOIC-8 751-07 1 Tape and Reel 2500 Contact Sales Office
NSV40301MDR2G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A SOIC-8 751-07 1 Tape and Reel 2500 $0.2943
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : 8 to 12
Mouser   (2015-07-09) : <1K
PandS   (2015-07-09) : <1K
市场订货至交货的时间(周) : Contact Factory
Datasheet: Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A
Rev. 1 (106.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type
 AEC Qualified 
 Pb-free 
 Halide free 
 Active     Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A   Dual NPN   3   40   0.06   200   -   100   0.576   SOIC-8 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A   Dual NPN   3   40   0.06   200   -   100   0.576   SOIC-8 
Datasheet: Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A
Rev. 1 (106.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
外形
751-07   
Datasheet: Low VCE(sat) Transistor, Dual NPN, 40 V, 6.0 A
Rev. 1 (106.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
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