Low/Medium Voltage MOSFETs | NTD20N03L27

单 N 沟道逻辑电平功率 MOSFET 30V，20A，27mΩ

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该逻辑电平垂直功率 MOSFET 是一个通用型零部件，具有目前低成本功率封装的“最佳设计”。该零部件是应对雪崩能量问题的理想设计。漏源极二极管具有理想的快速软恢复特性。

  • Power Supplies
  • Inductive Loads
  • PWM Motor Controls
  • Replaces MTD20N03L in many applications

  • Ultra-Low RDS(on) , Single Base, Advanced Technology
  • SPICE Parameters Available
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • High Avalanche Energy Specified
  • ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTD20N03L27T4G

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CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

30

-

20

2

20

55.5

-

29

-

13.8

1005

-

0.017

271

87

$0.42

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可靠性数据

Die Related Summary Data

Device: NTD20N03L27T4G

Equivalent to wafer fab process: HD3e

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

HD3e

0

8569312242

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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