此功率 MOSFET 适用于承受雪崩和换相模式下的高能量。 适用于电源、转换器和功率电机控制中的低压高速开关应用。 此类器件尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路,可针对非预期的瞬时电压提供附加安全裕度。
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可订购器件:
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产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Obsolete
Pb
A
H
P
DPAK INSERTION MOUNT
1
260
TUBE
75
N
P-Channel
PowerTrench® T1
DPAK
Low-Medium Voltage
Logic
0
Single
0
-60
-
20
4
-12
55
-
135
-
15
500
7
100
150
50
Price N/A
More Details
Obsolete
Pb
A
H
P
DPAK-3
1
260
TUBE
75
N
P-Channel
NA
NA
Low-Medium Voltage
Logic
0
Single
0
-60
-
20
4
-12
55
-
135
-
15
500
7
100
150
50
Price N/A
More Details
NTD2955T4G
Active
Pb
A
H
P
DPAK-3
1
260
REEL
2500
N
P-Channel
PowerTrench® T1
DPAK
Low-Medium Voltage
Logic
0
Single
0
-60
-
20
4
-12
55
-
135
-
15
500
7
100
150
50
$0.4732
More Details
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可靠性数据
Die Related Summary Data
Device: NTD2955-1G
Equivalent to wafer fab process: TMOS 7
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TMOS 7
0
1220062755
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)