单 N 沟道,功率 MOSFET,30V,63A,8mΩ

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功率 MOSFET,30 V,63 A,N 沟道,DPAK/IPAK

  • CPU Power Delivery
  • Low Side Switching
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses

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产品:

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产品系列:

可订购器件:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTD4808N-1G

Obsolete

CAD Model

Pb

A

H

P

DPAK INSERTION MOUNT

1

260

TUBE

75

N

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

30

8

20

2.5

63

22.73

-

12.4

7.1

26

1538

4.9

9.7

334

180

Price N/A

More Details

NTD4808NT4G

Obsolete

CAD Model

Pb

A

H

P

DPAK-3

1

260

REEL

2500

N

N-Channel

NA

NA

Low-Medium Voltage

Logic

0

Single

0

30

8

20

2.5

63

22.73

-

12.4

7.1

26

1538

4.9

9.7

334

180

Price N/A

More Details

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