P 沟道,功率 MOSFET,-20V,-5.9A,33mΩ

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功率 MOSFET,-20V,P 沟道,5.1A,33mΩ@4.5V,TSOP6 封装

  • Power Load Switch
  • High Side Load Switch
  • Charging Circuit and Battery Protection
  • Leading −20 V Trench for Low RDS(on)
  • −1.8 V Rated for Low Voltage Gate Drive
  • RoHS Compliant

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTGS3A033PZT1G

Obsolete

CAD Model

Pb

A

H

P

TSOP-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

NA

0

-20

-

±8

-1

-5.9

1.19

NA

29

18

18.8

NA

-

-

-

-

Price N/A

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