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NTHD4102P: Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET

Overview
Specifications
Packages
Datasheet: Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET¿
Rev. 6 (100.0kB)
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Product Overview
产品说明
Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET™
特性
 
  • Offers an Ultra Low RDS (ON) Solution in the ChipFET™ Package
  • Miniature ChipFet Package 40% Smaller Footprint than TSOP-6
  • Low Profile (<1.1mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics
  • Simplifies Circuit Designs since Additional Boost Circuits for Gate Voltages are not Required
  • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology
  • Pb-Free Package is Available
应用
  • Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, and PDAs
  • Charge Control in Battery Chargers
  • Buck and Boost Converters
技术文档及设计资源
应用注释 (2) 数据表 (1)
仿真模型 (4) 封装图纸 (1)
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NTHD4102PT1G Active
Pb-free
Halide free
Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET ChipFET-8 1206A-03 1 Tape and Reel 3000 $0.3333
NTHD4102PT3G Last Shipments 
Pb-free
Halide free
Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET ChipFET-8 1206A-03 1 Tape and Reel 10000  
NTHD4102PT1 Obsolete 
Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET ChipFET-8 1206A-03 1 Tape and Reel 3000  
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : 4 to 8
Avnet   (2015-07-09) : >10K
Digikey   (2015-07-09) : >10K
Mouser   (2015-07-09) : >1K
PandS   (2015-07-09) : >1K
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
Datasheet: Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET¿
Rev. 6 (100.0kB)
»浏览可靠性数据
»查看材料成分
»产品更改通知 (12)
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET   P-Channel   Dual   20   8   1.5   4.1   2.1   110   80     8.6     2.6   0.01   750   100   45   ChipFET-8 
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