Dual N-Channel ChipFET™ Power MOSFET 30V, 3.9A, 85mΩ
Lifetime
This device is optimized for fast low side switching applications. It features a technology that provides a balance between low gate charge and low RDS(on)
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Lifetime
Pb
A
H
P
ChipFET-8
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
CHIPFET-8
Small Signal
Logic
0
NA
0
30
Q1=Q2=85
20
3
2.9
1.13
-
Q1=Q2=140
25
3.6
140
0.7
4
53
16
$0.4955
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可靠性数据
Die Related Summary Data
Device: NTHD4502NT1G
Equivalent to wafer fab process: HD3e
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
HD3e
0
8569312242
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)