Single P-Channel Power MOSFET and Schottky Diode -20V -3.9A 140mΩ
Obsolete
Power MOSFET and Schottky Diode−20 V, −3.9 A FETKY®, P−Channel,2.0 A Schottky Barrier Diode, DFN6
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Obsolete
Pb
A
H
P
DFN-6
1
250
REEL
3000
N
P-Channel
PowerTrench® T1
NA
Low-Medium Voltage
Logic
0
with Schottky Diode
0
-20
-
12
-2
-3.9
1.5
225
140
3.7
3.8
230
1.6
37
105
40
Price N/A
More Details
Obsolete
Pb
A
H
P
DFN-6
1
250
REEL
3000
N
P-Channel
PowerTrench® T1
NA
Low-Medium Voltage
Logic
0
with Schottky Diode
0
-20
-
12
-2
-3.9
1.5
225
140
3.7
3.8
230
1.6
37
105
40
Price N/A
More Details
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