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Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm µCool™ Package
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
NTLUF4189NZTAG
Pb
A
H
P
UDFN-6
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
NA
Low-Medium Voltage
Logic
0
with Schottky Diode
0
30
-
8
1.5
1.2
0.8
350
200
10.4
1.4
95
0.4
2.1
15
10
Price N/A
More Details
NTLUF4189NZTBG
Pb
A
H
P
UDFN-6
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
NA
Low-Medium Voltage
Logic
0
with Schottky Diode
0
30
-
8
1.5
1.2
0.8
350
200
10.4
1.4
95
0.4
2.1
15
10
Price N/A
More Details
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