双 N 沟道,功率 MOSFET,60V,111A,4.2mΩ

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概览

适用于紧凑和高效设计的工业用功率 MOSFET,采用 5x6 mm 扁平引线封装,且具有较高的热性能。

  • Motor Control
  • Synchronous DC to DC Regulator
  • Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • Battery Management and Protection
  • Battery Packs
  • Power Supplies
  • Rotary Drones
  • Power Tools
  • Power Over Ethernet (PoE)
  • Low on resistance
  • High current capability
  • 100% avalanche tested
  • Pb-Free
  • Small footprint (5x6 mm)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMFD5C650NLT1G

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Active

CAD Model

Pb

A

H

P

SO-8FL Dual / DFN-8

1

260

REEL

1500

Y

60

4.2

N-Channel

Dual

20

2.2

111

125

-

5.8

16

37

2546

$0.794

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