Small Signal MOSFETs | NTNUS3171PZ

单 P 沟道小信号 MOSFET -20V，-200mA，3.5Ω

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概览

小信号 MOSFET −20 V，−200 mA，单 P 沟道，1.0 x 0.6 mm SOT−1123 封装

  • High Side Switch
  • High Speed Interfacing
  • Optimized for Power Management in Ultra Portable Equipment

  • Single P-Channel MOSFET
  • Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package
  • 1.5 V Gate Voltage Rating
  • Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
    Thin Environments such as Portable Electronics.

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTNUS3171PZT5G

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CAD Model

Pb

A

H

P

SOT-1123-3

524AA

1

260

REEL

8000

N

P-Channel

PowerTrench® T1

SOT-1123-3

Small Signal

Logic

0

NA

0

-20

3500

8

1

0.15

0.125

4000

3500

-

-

13

-

-

3.4

1.6

Price N/A

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可靠性数据

Die Related Summary Data

Device: NTNUS3171PZT5G

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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