单 N 沟道功率 MOSFET 30V,2.5A,110mΩ

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这款 30 V N 沟道小信号 MOSFET 采用安森美半导体领先的低门极电荷平面技术,适用于快速开关器件。此性能特别适合于 DC 到 DC 转换或低压侧电源开关应用。该器件采用小型 SOT-23 (3.0 x 3.0 mm) 封装,非常适合笔记本计算机和其他便携式应用。

  • DC-DC Conversion
  • Load/Power Switch for Portables
  • Load/Power Switch for Computing
  • Leading Planar Technolgy for Low Gate Charge/Fast Switching
  • 4.5 V Rated for Low Voltage Gate Drive
  • SOT-23 Surface Mount for Small Footprint (3x3mm)
  • RoHS Compliant

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTR4503NT1

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Obsolete

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

235

REEL

3000

N

30

85

N-Channel

Single

20

3

0.14

0.73

-

105

1

3.6

135

Price N/A

More Details

NTR4503NT1G

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

3000

N

30

85

N-Channel

Single

20

3

0.14

0.73

-

105

1

3.6

135

$0.0945

More Details

NTR4503NT3G

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Obsolete

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

1

260

REEL

10000

N

30

85

N-Channel

Single

20

3

0.14

0.73

-

105

1

3.6

135

Price N/A

More Details

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