单 N 沟道,功率 MOSFET,80V,68A,9.5mΩ

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适用于紧凑和高效设计的商用功率 MOSFET,采用 3x3mm 扁平引线封装,且具有较高的热性能。

  • Reverser Battery protection
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • Synchronous Rectification
  • Motor Control –
  • Battery management
  • Switching Power supplies
  • Low On-Resistance
  • Low Gate Charge
  • Small Footprint (3x3 mm)
  • RoHS Compliant

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTTFS6H850NTAG

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CAD Model

Pb

A

H

P

WDFN-8 / u8FL

1

260

REEL

1500

Y

80

9.5

N-Channel

Single

20

4

68

107

-

-

12.6

19

1140

$0.356

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