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NVE4153N: Power MOSFET 20V, 915mA, 230mOhm, N-Channel with ESD Protection, Logic level.

Overview
Specifications
Datasheet: Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection SC-75 and SC-89
Rev. 7 (72kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
产品说明
Automotive Power MOSFET ideal for low power applications. 20V 915mA 230mOhm Single N-Channel SC-89 with ESD Protection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性
 
  • Low RDS(on) Improving System Efficiency
  • Low Threshold Voltage
  • ESD Protected Gate
  • Pb-Free Packages are Available
  • AEC qualified
应用
  • Load/Power Switches
  • Power Supply Converter Circuits
  • Battery Management
  • Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
技术文档及设计资源
仿真模型 (4) 封装图纸 (1)
数据表 (1)  
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NVE4153NT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 20V, 915mA, 230mOhm, N-Channel with ESD Protection, Logic level. SC-89-3 463C-02 1 Tape and Reel 3000 $0.1339
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : 2 to 4
Digikey   (2015-07-09) : >1K
Mouser   (2015-07-09) : >1K
Datasheet: Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection SC-75 and SC-89
Rev. 7 (72kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 20V, 915mA, 230mOhm, N-Channel with ESD Protection, Logic level.   N-Channel   Single   20   6   1.1   0.915   0.3   170   127     1.82     0.42     110   16   12   SC-89-3 
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