双 N 沟道,小信号门极,ESD 保护,MOSFET,30V,245mA,7Ω

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汽车用功率 MOSFET。 30V,245mA,7Ω,双 N 沟道,WDFN6,带 ESD 保护,逻辑电平。通过 AEC-Q101 认证的 MOSFET,符合生产件批准程序 (PPAP),适用于汽车应用。

  • Automotive
  • Optimized Layout for Excellent High Speed Signal Integrity
  • Low Gate Charge for Fast Switching
  • Small 2x2 mm Footprint
  • ESD Protected Gate
  • AEC-Q101 Qualified and PPAP Capable
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NVLJD4007NZTAG

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

30

-

N-Channel

Dual

10

1.5

0.245

0.755

Q1: 7500, Q2: 7500

Q1: 7000, Q2: 7000

0.75

0.75

12.2

Price N/A

More Details

NVLJD4007NZTBG

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

30

-

N-Channel

Dual

10

1.5

0.245

0.755

Q1: 7500, Q2: 7500

Q1: 7000, Q2: 7000

0.75

0.75

12.2

Price N/A

More Details

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