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NVMFD5853N: Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level.

Overview
Specifications
Datasheet: Power MOSFET 40 V, 10 mOhm, 53 A, Dual N−Channel SO-8FL
Rev. 0 (124.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
产品说明
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性   优势
     
  • Small Footprint (5x6 mm)
 
  • Reduced board space, smaller modules
  • Low RDS(on)
 
  • Minimize Conduction Losses
  • Low Capacitance
 
  • Minimize Driver Losses
  • NVMFD5853NWF Wettable Flanks Product
 
  • Facilitates Automated Optical Inspection
  • AEC-Q101 Qualified and PPAP Capable
 
  • Suitable for use in automotive applications
  • Standard Gate Level (VTH min. = 2 V)
 
  • Ensures turn off in noisy environments (motor control)
应用   终端产品
  • Motor Control
 
  • Engine control module
  • Body control module
  • Chassis control module
技术文档及设计资源
应用注释 (1) 封装图纸 (1)
数据表 (1)  
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NVMFD5853NT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level. SO-8FL Dual / DFN-8 506BT 1 Tape and Reel 1500 $0.4738
NVMFD5853NWFT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level. SO-8FL Dual / DFN-8 506BT 1 Tape and Reel 1500 $0.4911
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : Contact Factory
Avnet   (2015-07-09) : >1K
市场订货至交货的时间(周) : Contact Factory
Avnet   (2015-07-09) : >1K
Datasheet: Power MOSFET 40 V, 10 mOhm, 53 A, Dual N−Channel SO-8FL
Rev. 0 (124.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level.   N-Channel   Dual   40   20   4   53   37       10     24   6.6   9   1225   1250   100   SO-8FL Dual / DFN-8 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level.   N-Channel   Dual   40   20   4   53   37       10     24   6.6   9   1225   1250   100   SO-8FL Dual / DFN-8 
Datasheet: Power MOSFET 40 V, 10 mOhm, 53 A, Dual N−Channel SO-8FL
Rev. 0 (124.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
外形
506BT   
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