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NVMFD5873NL: Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level.

Overview
Specifications
Datasheet: 60 V, 13 mOhm, 58 A, Dual N Channel Power MOSFET
Rev. 3 (76kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
产品说明
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性   优势
     
  • Low RDS(on)
 
  • Reduced conduction losses
  • Low Capacitance
 
  • Reduced input losses
  • Low gate charge
 
  • Reduced switching losses
  • AEC-Q101 Qualified
 
  • Suitable for automotive applications
  • Devices are Pb free, Halogen free, and BFR free
 
  • RoHS compliant
  • 5 x 6 x 1 mm Dual SO-8FL package
 
  • Smaller PC boards and modules
应用   终端产品
  • Motor control
  • High Side / Low Side switch
 
  • Chassis Control Module
技术文档及设计资源
应用注释 (1) 数据表 (1)
仿真模型 (4) 封装图纸 (1)
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NVMFD5873NLT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level. SO-8FL Dual / DFN-8 506BT 1 Tape and Reel 1500 $0.6222
NVMFD5873NLWFT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level. SO-8FL Dual / DFN-8 506BT 1 Tape and Reel 1500 $0.6394
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : Contact Factory
Avnet   (2015-07-09) : <1K
Mouser   (2015-07-09) : >1K
市场订货至交货的时间(周) : Contact Factory
Avnet   (2015-07-09) : >1K
Datasheet: 60 V, 13 mOhm, 58 A, Dual N Channel Power MOSFET
Rev. 3 (76kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level.   N-Channel   Dual   60   20   2.5   58   107     16.5   13   16.5   30.5   8.8   18   1560   145   96   SO-8FL Dual / DFN-8 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level.   N-Channel   Dual   60   20   2.5   58   107     16.5   13   16.5   30.5   8.8   18   1560   145   96   SO-8FL Dual / DFN-8 
Datasheet: 60 V, 13 mOhm, 58 A, Dual N Channel Power MOSFET
Rev. 3 (76kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
外形
506BT   
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