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NVMFS4C01N: Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level.

Overview
Specifications
Datasheet: Power MOSFET
Rev. 1 (73kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
产品说明
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性
 
  • Small Footprint (5x6 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low QG and Capacitance to Minimize Driver Losses
  • NVMFS4C01NWF − Wettable Flanks Product
  • AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
应用   终端产品
  • Reverse battery protection
  • DC-DC converter output driver
 
  • HID and LED lighting
  • Infotainment Power Supplies
技术文档及设计资源
仿真模型 (4) 封装图纸 (1)
数据表 (1)  
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NVMFS4C01NT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level. SO-8FL / DFN-5 488AA 1 Tape and Reel 1500 $1.0658
NVMFS4C01NT3G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level. SO-8FL / DFN-5 488AA 1 Tape and Reel 5000 $1.0658
NVMFS4C01NWFT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level. SO-8FL / DFN-5 488AA 1 Tape and Reel 1500 $1.1158
NVMFS4C01NWFT3G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level. SO-8FL / DFN-5 488AA 1 Tape and Reel 5000 $1.1158
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : Contact Factory
Mouser   (2015-07-09) : <1K
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
Datasheet: Power MOSFET
Rev. 1 (73kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level.   N-Channel   Single   30   20   2.2   319   161     1.2   0.9   63   139   13   147   10144   5073   148   SO-8FL / DFN-5 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level.   N-Channel   Single   30   20   2.2   319   161     1.2   0.9   63   139   13   147   10144   5073   148   SO-8FL / DFN-5 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level.   N-Channel   Single   30   20   2.2   319   161     1.2   0.9   63   139   13   147   10144   5073   148   SO-8FL / DFN-5 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V, 319A, 0.9 mOhm, Single N-Channel, SO8-FL, Logic Level.   N-Channel   Single   30   20   2.2   319   161     1.2   0.9   63   139   13   147   10144   5073   148   SO-8FL / DFN-5 
Datasheet: Power MOSFET
Rev. 1 (73kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
外形
488AA   
Datasheet: Power MOSFET
Rev. 1 (73kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
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