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NVTFS5811NL: Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.

Overview
Specifications
Packages
Datasheet: Power MOSFET, 40 V, 40 A, 6.7 mΩ, Single N-Channel
Rev. 2 (120.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
产品说明
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性   优势
     
  • Low on resistance
 
  • Minimal conduction losses
  • High current capability
 
  • Robust load performance
  • 100% avalanche tested
 
  • Safeguards agains voltage overstress failures
应用   终端产品
  • motor driver
 
  • Automotive motor control
技术文档及设计资源
应用注释 (1) 数据表 (1)
仿真模型 (4) 封装图纸 (1)
供货情况和样品
产品
状况
Compliance
具体说明
封装
MSL*
容器
预算价格 (1千个数量的单价)
类型
外形
类型
数量
NVTFS5811NLTAG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level. u8FL / WDFN-8 511AB 1 Tape and Reel 1500 $0.3564
NVTFS5811NLTWG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level. u8FL / WDFN-8 511AB 1 Tape and Reel 5000 $0.3564
NVTFS5811NLWFTAG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level. u8FL / WDFN-8 511AB 1 Tape and Reel 1500 $0.3776
NVTFS5811NLWFTWG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level. u8FL / WDFN-8 511AB 1 Tape and Reel 5000 $0.3776
表面贴装器件的潮湿敏感度等级(MSL)(260°C回流温度时测量无铅,235°C回流温度时测量含铅)
市场订货至交货的时间(周) : Contact Factory
Mouser   (2015-07-09) : >1K
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory
FutureElectronics   (2015-07-09) : >10K
Datasheet: Power MOSFET, 40 V, 40 A, 6.7 mΩ, Single N-Channel
Rev. 2 (120.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.   N-Channel   Single   40   20   2.2   40   21     10   6.7   17   30   9   17   1570   215   157   u8FL / WDFN-8 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.   N-Channel   Single   40   20   2.2   40   21     10   6.7   17   30   9   17   1570   215   157   u8FL / WDFN-8 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.   N-Channel   Single   40   20   2.2   40   21     10   6.7   17   30   9   17   1570   215   157   u8FL / WDFN-8 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.   N-Channel   Single   40   20   2.2   40   21     10   6.7   17   30   9   17   1570   215   157   u8FL / WDFN-8 
Datasheet: Power MOSFET, 40 V, 40 A, 6.7 mΩ, Single N-Channel
Rev. 2 (120.0kB)
»查看材料成分
»No Product Change Notifications exist
Product Overview
外形
511AB   
封装
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