Small Signal MOSFETs | SCH1430

Power MOSFET, 20V, 125mΩ, 2A, Single N-Channel

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CAD Model

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概览

This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.

  • Load Switch
  • Air Conditioner
  • Low On-Resistance
  • 1.8V drive
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS compliance
  • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

SCH1430-TL-H

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

SOT-563 / SCH-6

463AB

1

260

REEL

5000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

20

-

12

1.3

2

0.8

NA

190

-

1.8

NA

0.55

-

28

21

Price N/A

More Details

SCH1430-TL-W

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

SOT-563 / SCH-6

463AB

1

260

REEL

5000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

20

-

12

1.3

2

0.8

NA

190

-

1.8

NA

0.55

-

28

21

Price N/A

More Details

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