KSP13

NPN外延硅达林顿晶体管

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CAD模型

概览

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

应用

This product is general usage and suitable for many different applications.

特性

集电极-发射极电压： V_CES= 30V
集电极功耗： P_C（最大值）= 625mW
High Gain Devices
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

I_C Continuous (A)

V_(BR)CEO Min (V)

V_CE(sat) Max (V)

h_FE Min (k)

h_FE Max (k)

f_T Min (MHz)

Reference Price

KSP13BU

Active

TO-92-3

135AN

BLKBG

10000

NPN

0.5

1.5

125

$0.0487

KSP13TA

Active

TO-92-3 LF

135AR

FNFLD

2000

NPN

0.5

1.5

125

$0.0485

产品型号:

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Darlington Transistors | KSP13

NPN外延硅达林顿晶体管

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