General Purpose and Low VCE(sat) Transistors | 2N3055H

晶体管硅功率 NPN

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CAD Model

CAD模型

概览

该 PNP 双极功率晶体管适用于大功率放大器和开关放大器应用。 2N3055 (NPN) 和 MJ2955 (PNP) 为互补器件。

  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available

物质成分

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可订购器件:

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N3055H

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Obsolete

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

-

General Purpose

-

-

-

-

-

-

-

20

70

2.5

115

Price N/A

More Details

2N3055HG

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

-

General Purpose

-

-

-

-

-

-

-

20

70

2.5

115

Price N/A

More Details

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