IGBTs | FGA15S125P

IGBT，1250v，15A，短路阳极

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概览

安森美半导体的短路阳极沟槽 IGBT 采用先进的场截止沟槽和短路阳极技术，可为开关应用提供出色的导通和开关性能。该器件可在并联配置中运行，且具有出色的雪崩功能。该器件适用于电感加热和微波炉。

  • 消费型设备
  • 高速开关
  • 低饱和电压：VCE(sat) =2.25V @ IC = 15A
  • 高输入阻抗
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA15S125P

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1250

15

2.25

2

0.5

0.74

-

-

129

-

-

136

Yes

Price N/A

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