IGBTs | FGA30N120FTD

IGBT，1200V，30A，场截止沟槽

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安森美半导体的 1200V 沟槽 IGBT 系列采用先进的场截止沟槽技术，为软开关应用提供出色的导通和开关性能。该器件可以在并行配置下运行，具有优异的雪崩耐用性。该器件适用于电感加热和微波炉。

  • 消费型设备
  • 场截止沟道技术
  • 高速开关
  • 低饱和电压：VCE(sat) = 1.6V @ IC = 30A
  • 高输入阻抗

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGA30N120FTDTU

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

30

1.6

1.3

1.16

0.54

775

43

208

-

-

339

Yes

Price N/A

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