IGBTs | FGA30N120FTD

IGBT，1200V，30A，场截止沟槽

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安森美半导体的 1200V 沟槽 IGBT 系列采用先进的场截止沟槽技术，为软开关应用提供出色的导通和开关性能。该器件可以在并行配置下运行，具有优异的雪崩耐用性。该器件适用于电感加热和微波炉。

  • 消费型设备
  • 场截止沟道技术
  • 高速开关
  • 低饱和电压：VCE(sat) = 1.6V @ IC = 30A
  • 高输入阻抗

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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FGA30N120FTDTU

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

30

1.6

1.3

1.16

0.54

775

43

208

-

-

339

Yes

Price N/A

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