IGBTs | FGA30S120P

1300V, 30A，短路阳极 IGBT

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飞兆半导体的短路阳极沟道 IGBT 系列采用先进的场截止沟道和短路阳极技术，为软开关应用提供卓越的导通和开关性能。该器件可并行配置，具有极佳的雪崩能力。该器件为感应加热和微波炉而设计。

  • 消费型设备
  • 高速开关
  • 低饱和电压：VCE(sat) =1.75V @ IC = 30A
  • 高输入阻抗
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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FGA30S120P

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1300

30

1.75

1.7

1.22

1.3

-

-

78

-

-

348

Yes

Price N/A

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