IGBTs | FGA30S120P

1300V, 30A，短路阳极 IGBT

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飞兆半导体的短路阳极沟道 IGBT 系列采用先进的场截止沟道和短路阳极技术，为软开关应用提供卓越的导通和开关性能。该器件可并行配置，具有极佳的雪崩能力。该器件为感应加热和微波炉而设计。

  • 消费型设备
  • 高速开关
  • 低饱和电压：VCE(sat) =1.75V @ IC = 30A
  • 高输入阻抗
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGA30S120P

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1300

30

1.75

1.7

1.22

1.3

-

-

78

-

-

348

Yes

Price N/A

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