IGBTs | FGB20N60S_F085

IGBT，600V，20A，2.2V，D2PAK 场截止

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概览

安森美半导体的新型场截止 IGBT 系列采用新的场截止 IGBT 技术，为汽车充电器、逆变器和其他需要低导通和开关损耗的应用提供最佳性能。

  • 高电流能力
  • 低饱和电压： VCE(sat) = 2.2 V (IC = 20 A)
  • 高输入阻抗
  • 快速开关
  • 符合 AEC-Q101 汽车行业标准要求
  • 符合 RoHS 标准

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGB20N60SFD-F085

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-

600

40

-

1.9

0.13

0.31

111

-

63

-

-

208

-

$1.6374

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