IGBTs | FGH30N60LSD

IGBT，600 V，30A，PT

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概览

FGH30N60LSD IGBT 采用安森美半导体的平面技术，具有卓越的导通性能，为太阳能逆变器、UPS 等低导通损耗是最重要因素的应用中提供最佳性能。

  • 发电和配电
  • 低饱和电压：VCE(sat) =1.1V @ IC = 30A
  • 高输入阻抗
  • 低传导损耗

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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Reference Price

FGH30N60LSDTU

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

30

1.1

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-

Yes

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