IGBTs | FGH75T65SQDTL4

IGBT，650V，75A，场截止沟槽

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概览

安森美半导体的新型场截止第 4 代 IGBT 系列采用新型场截止 IGBT 技术，为太阳能逆变器、UPS、焊接机、电信、ESS 和 PFC 应用等提供绝佳性能，低导通和开关损耗在这些应用中至关重要。

  • 最大结温： TJ = 175°C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.6 V（典型值） @ IC = 75 A
  • ILM(1)部件100%检测
  • 高输入阻抗
  • 快速开关
  • 紧密的参数分布
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH75T65SQDTL4

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Active

CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

Y

-

650

75

1.6

1.8

0.266

0.307

76

-

128

-

-

375

Yes

$2.9279

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