This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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NGTB50N60FWG
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
600
50
1.45
1.95
1.2
1.1
77
8
310
5
-
223
Yes
Price N/A
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