FDMC7660S

N 沟道，Power Trench® SyncFET™，30V，20A，2.2mΩ

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概览

FDMC7660S 适用于最大程度降低电源转换应用中的损耗。同时结合了硅和封装技术的发展，可提供最低的 rDS(on)，同时保持卓越的开关性能。此器件还增加了高效单片肖特基体二极管的优点。

应用

This product is general usage and suitable for many different applications.

特性

最大值 r_DS(on)=2.2 mΩ（需 V_GS=10 V、I_D=20 A
最大值 r_DS(on)=2.95 mΩ（需 V_GS=4.5 V、I_D=18 A
高性能技术可实现极低的 r_DS(on)
终端无引线且符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC7660S

Active

PQFN-8

483AK

260

REEL

3000

2.2

N-Channel

Single

2.5

2.95

3250

$0.5647

产品型号:

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MOSFETs | FDMC7660S

N 沟道，Power Trench® SyncFET™，30V，20A，2.2mΩ

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