MOSFETs | FDV304P

P 沟道，数字 FET，-25V，-0.46A，1.1Ω

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CAD Model

CAD模型

概览

此 P 沟道增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件专为电池电源应用而设计，如笔记本电脑和手机。此器件具有卓越的导通电阻性能，即使在低至 2.5V 的门极驱动电压中亦是如此。

  • This product is general usage and suitable for many different applications.
  • -25V、-0.46A（连续值）、-1.5A（峰值） RDS(ON) = 1.1 Ω @ VGS = -4.5 V，RDS(ON) = 1.5 Ω @ VGS= -2.7 V。
  • 栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.5V。
  • 栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型。
  • 紧凑的工业标准SOT-23表面贴装封装。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDV304P

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

318

1

260

REEL

3000

N

-25

-

P-Channel

Single

-8

-1.5

-0.46

0.35

1500

1100

-

1.1

63

$0.0771

More Details

FDV304P-F169

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Obsolete

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

318

1

260

REEL

3000

N

-25

-

P-Channel

Single

-8

-1.5

-0.46

0.35

1500

1100

-

-

63

Price N/A

More Details

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