MOSFETs | FQN1N50C

功率 MOSFET，N 沟道，QFET®，500 V，0.38 A，6 Ω，TO-92

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概览

此 N 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

  • 照明
  • 0.38A，500V，RDS(on) = 6Ω（最大值）（VGS = 10 V 且 ID = 0.19A 时）
  • 低栅极电荷（典型值 4.9nC)
  • 低 Crss（典型值 4.1pF)
  • 100% 经过雪崩击穿测试

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQN1N50CTA

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Last Shipments

CAD Model

Pb

A

H

P

TO−92 3LD 4.75x4.80

135AV

NA

0

FNFLD

2000

N

500

6000

N-Channel

Single

±30

4

0.38

0.89

-

-

-

4.9

150

Price N/A

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