MOSFETs | NDT456P

P 沟道增强型场效应晶体管

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概览

功率 SOT P 沟道增强型电场效应晶体管是使用安森美半导体的高单元密度 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻，可提供出色的开关性能。此类器件非常适用于低压应用，如笔记本电脑电源管理、电池供电电路和直流电机控制。

  • This product is general usage and suitable for many different applications.
  • 7.5 A，30 V
    RDS(ON) = 0.030 Ω @ VGS = -10 V
    RDS(ON) = 0.045 Ω @ VGS = -4.5 V
  • 高密度设计可实现极低的RDS(ON)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDT456P

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

Y

-30

30

P-Channel

Single

20

-3

-7.5

3

-

45

-

47

1440

$0.8533

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