互补,功率 MOSFET,20V

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功率 MOSFET,20 V/−20 V,4.6 A/−4.1 A,互补,2x2 mm,WDFN 封装

  • Synchronous DC−DC Conversion Circuits
  • Load/Power Management of Portable Devices
  • Color Display and Camera Flash Regulators
  • PDA
  • Cellular Phones
  • Hard Drives
  • Complementary N-Channel and P-Channel MOSFET
  • WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction
  • Leading Edge Trench Technology for Low On Resistance
  • 1.8 V Gate Threshold Voltage
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTLJD3119CTAG

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

±20

-

Complementary

Dual

8

1

3.8

1.5

N:85, P:135

N:65, P:100

5.5

3.7

N: 271, P: 531

Price N/A

More Details

NTLJD3119CTBG

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Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

±20

-

Complementary

Dual

8

1

3.8

1.5

N:85, P:135

N:65, P:100

5.5

3.7

N: 271, P: 531

$0.2896

More Details

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