NTTFS4C02N

单 N 沟道功率 MOSFET 30V，170A，2.25mΩ

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CAD模型

概览

功率 MOSFET 30 V，170 A，单 N 沟道，8FL

应用

DC-DC Converters
Power Load Switch
Notebook Battery Management

特性

Low R_DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NTTFS4C02NTAG

Active

WDFN-8 / u8FL

511AB

260

REEL

1500

2.25

N-Channel

Single

2.2

170

3.1

11.6

2980

$0.3708

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MOSFETs | NTTFS4C02N

单 N 沟道功率 MOSFET 30V，170A，2.25mΩ

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