Silicon Carbide (SiC) Diodes | FFSB2065B-F085

汽车碳化硅 (SiC) 肖特基二极管，650 V

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碳化硅 (SiC) 肖特基二极管使用全新技术，能够提供卓越的开关性能，且比硅具有更高的可靠性。碳化硅的无逆向恢复电流、温度无关开关特性和卓越的热性能，使其成为下一代功率半导体产品。系统优点包括最高能效、更快的运行频率、提高的功率密度、降低的 EMI，以及减小的系统尺寸和成本。

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  • Max Junction Temperature 175 oC
  • Avalanche Rated 94 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 Qualified and PPAP Capable

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FFSB2065B-F085

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D2PAK2 (TO-263-2L)

418BK

1

260

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800

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D2

Single

650

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1.7

88

160

$2.8828

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