N沟道逻辑电平增强模式场效应晶体管,50V,220mA

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概览

这款N沟道增强模式MOSFET采用专有的高单元密度DMOS技术生产,用于最大限度地减少导通电阻,同时提供稳固、可靠和快速开关的性能表现。BSS138尤其适合低电压、低电流的应用,如小型伺服电机控制、功率MOSFET栅极驱动器和其它开关应用。

  • 本产品为通用产品,适合各类不同应用。

  • 0.22A, 50V。
    RDS(ON) = 3.5Ω @ VGS = 10V。RDS(ON) = 6.0Ω @ VGS = 4.5V
  • 高密度单元设计,实现极低的RDS(ON)
  • 稳固可靠
  • 紧凑型工业标准SOT-23表面贴装封装。

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

50

3500

-

1.5

0.22

0.36

-

6000

-

1

27

0.4

-

13

6

$0.0356

More Details

Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

60

3500

-

1.5

220

0.36

-

6000

-

1

NA

-

-

-

-

$0.0799

More Details

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

50

3500

-

1.5

0.22

0.36

-

6000

1.7

1.7

27

0.4

-

13

6

Price N/A

More Details

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