High Voltage MOSFETs | FCMT299N60

功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，12 A，299 mΩ，Power88

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SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的出色性能。此技术专用于最大程度降低导通损耗，提供出色的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET II MOSFET 非常适用于开关电源应用，如服务器/电信电源、适配器和太阳能逆变器应用。Power88 封装是一款超薄表面贴装封装（高 1mm），体积和占位都极小 (8x8 mm2)。SuperFET II MOSFET 采用 Power88 封装，具有更低的寄生电源电感以及分离的电源和驱动源，可提供出色的开关性能。Power88 提供 1 级湿度敏感性 (MSL 1)。

  • Adaptors
  • Server and Telecom Power Supplies
  • Solar Inverters
  • 650 V @ TJ = 150°C
  • RDS(on) = 250 mΩ（典型值）
  • 超低栅极电荷（典型值 Qg = 39 nC)
  • 低有效输出电容（典型值 Coss(eff.) = 127 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCMT299N60

Contact Sales

Active

CAD Model

Pb

A

H

P

PQFN-4

483AP

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 88

High Voltage

Standard

0

Single

0

600

299

DC: ±20, AC: ±30

3.5

12

125

-

-

-

39

1465

14

3800

30

4.87

$1.7751

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