High Voltage MOSFETs | FCP165N65S3

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，19 A，165 mΩ，TO-220

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概览

SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此先进工艺专用于最大程度降低导电损耗，提供卓越的开关性能，并且可以承受极端 dv/dt 速率。因此，SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题，实现更简单的设计实施。

  • Computing
  • Consumer
  • Industrial
  • Notebook / Desktop computer
  • Telecom / Server
  • Game Console
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter
  • 700 V @ TJ = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 39 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
  • Internal Gate Resistance: 4.6 Ω
  • Optimized Capacitance
  • Typ. RDS(on) = 140 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCP165N65S3

Contact Sales

Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

650

165

30

4.5

19

154

-

-

-

39

1500

16

5800

35

-

$1.6624

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