功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,6 A,600 mΩ,TO-220F

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SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的卓越性能。此先进技术专用于最大程度降低导电损耗,提供卓越的开关性能,并且可以承受极端 dv/dt 速率。因此,SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题,实现更简单的设计实施。

  • Computing
  • Consummer
  • Industrial
  • Notebook / Desktop computer / Game consol
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter
  • 700 V @ TJ= 150 oC
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
  • Optimized Capacitance
  • 100% Avalanche Tested
  • RoHS Compliant
  • Typ. RDS(on) = 474 mΩ
  • Internal Gate Resistance: 0.9 Ω

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCPF600N65S3R0L

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

650

600

N-Channel

Single

30

4.5

6

54

-

-

-

11

465

Price N/A

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