-80V P 沟道 PowerTrench® MOSFET

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概览

此P沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产,这一先进工艺已针对rDS(on)、开关性能和稳固性进行了优化。

  • This product is general usage and suitable for many different applications.
  • VGS = -10 V,ID = -2.1 A时,最大rDS(on) = 183mΩ
  • VGS = -4.5 V,ID = -1.9 A时,rDS(on) = 233 mΩ
    (最大值)
  • 高性能沟道技术可实现极低的rDS(on)
  • 高功率和高电流处理能力,采用广泛使用的表面贴装封装
  • 快速开关速度
  • 100%经过UIL测试
  • 符合RoHS标准

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC3535

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Last Shipments

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

-80

183

P-Channel

Single

±20

-3

-2.1

1.6

-

233

-

6.8

659

Price N/A

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