Low/Medium Voltage MOSFETs | FDD10AN06A0

N 沟道，PowerTrench® MOSFET，60V，50A，10.5mΩ

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N 沟道，PowerTrench® MOSFET，60V，50A，10.5mΩ

  • AC-DC商用电源
  • AC-DC商用电源-服务器和工作站
  • AC-DC商用电源-台式计算机
  • 其他工业
  • 其他消费型电子

  • RDS(on) = 9.4mΩ （典型值） @ VGS = 10V, ID = 50A
  • Qg(tot) = 28nC（典型值） @ VGS = 10V
  • 低米勒电荷
  • 低 Qrr 体二极管
  • UIS 能力（单脉冲和重复脉冲）
  • 符合 AEC Q101 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD10AN06A0

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

60

10.5

±20

4

50

135

-

-

-

28

1840

7.8

23

340

110

$0.868

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可靠性数据

Die Related Summary Data

Device: FDD10AN06A0

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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