Low/Medium Voltage MOSFETs | FDD24AN06L_F085

N 沟道，PowerTrench® MOSFET，60V，40A，16mΩ

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N 沟道，PowerTrench® MOSFET，60V，40A，16mΩ

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  • rDS(ON) = 20 mΩ（典型值），VGS = 10 V，ID = 40 A
  • Qg(tot) = 16nC （典型值），VGS = 5V
  • 低米勒电荷
  • 低 QRR体二极管
  • UIS能力（单脉冲和重复脉冲）
  • 符合AEC Q101
  • 符合 RoHS 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD24AN06LA0-F085

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Pb

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DPAK-3 / TO-252-3

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TO-252-3

Low-Medium Voltage

Logic

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60

19

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可靠性数据

Die Related Summary Data

Device: FDD24AN06LA0-F085

Equivalent to wafer fab process: 2C

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2C

0

3698398665

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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